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Aluminium gallium arsenide

Aluminium gallium arsenide (also Aluminum gallium arsenide) (AlxGa1-xAs) is a semiconductor with the very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs.

The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs).

The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.

Referenced By

Chemical compound | Diode laser | Field-effect transistor | Field effect transistor | Injection laser diode | JFET | Laser diode | List of chemistry topics | MOSFET | Semi-Conductors | Semiconductor | Semiconductor laser | Semiconductor materials

 

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This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Aluminium gallium arsenide".

 

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